Integrated SiC Temperature Sensor Boosts Power Devices
In a recent article published in the journal Power Electronic Devices and Components, researchers from the United Kingdom present a novel design for a monolithically integrated silicon carbide-based temperature sensor within a 4H-SiC JFET (Junction Field-Effect Transistor). This integration aims to enhance the performance and reliability of power electronic devices by providing real-time temperature monitoring. Background The increasing demand for high-performance power electronic devices has driven significant advancements in semiconductor materials and technologies. Silicon carbide (SiC) has emerged as a leading candidate for high-voltage and high-temperature applications due to its superior thermal conductivity, wide bandgap, and high breakdown electric field compared to traditional silicon-based devices. As power electronic systems become more compact and efficient, the need for effective thermal management and real-time monitoring of junction temperatures has become paramount. Th...